Antifuse structure for in line circuit modification

ABSTRACT

An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.12/574,926, filed Oct. 7, 2009, the disclosure of which is incorporatedby reference herein in its entirety.

BACKGROUND

The present invention relates to integrated circuit (IC) structures, andmore specifically, to antifuses for in line circuit modification.

Fuses and antifuses have been used in integrated circuits for tailoringcircuit parameters for optimal performance. Fuses increase theresistance of a circuit path when subjected to a programming current.Fuses typically include a fuse link and contact regions at both ends ofthe fuse link including a plurality of contacts of a uniformed size. Thefuse has an underlying polycrystalline layer formed over a substrate andan overlying silicide layer. Fuses are “blown” by applying a voltageacross the fuse structure. This voltage causes a current to flow and thestructure to open, resulting in a permanent open circuit. Fuses arestructures in which resistance is increased during programming andantifuses are structures in which resistance is decreased duringprogramming.

Antifuses are structures that, when first fabricated, are an opencircuit. When the antifuse is “fused,” the open circuit becomes closedand conduction across the antifuse becomes possible. Thus, antifuses areused to perform the opposite function of a fuse. Typically an antifuseis fused by applying a sufficient voltage, called a “fusing voltage”across the antifuse structure. This voltage causes a current to flow andthe structure to fuse together, resulting in a permanent electricalconnection.

Each contact formed on the contact regions is typically formed byetching a contact via to a surface of the substrate and depositing ametal material such as titanium (Ti) and organic carrier material withinthe via to the surface of the substrate by a chemical vapor deposition(CVD) process thereby evaporating the organic material and leaving themetal material on the surface of the substrate. This process isperformed at a temperature of approximately 400 degrees Celsius. Theprocessing temperature may be too low to completely evaporate theorganic material; therefore, the metal material and any residual carboncontaining material are then treated by an N2/H2 plasma to break a bondof the metal material and the carbon containing material. During thistreatment, hydrogen reacts with the carbon containing material therebyevaporating the residual carbon containing material and the nitrogenreacts with the metal material and leaves a metal precursor which acts aliner within the contact via. Contact material is then deposited withinthe contact via to form the contact.

SUMMARY

The present invention provides an antifuse structure including untreatedmetal precursor at a bottom surface of a contact via which remains in ahigh resistive state and becomes conductive upon applying a largeprogramming current.

According to one embodiment of the present invention, an antifusestructure is provided. The antifuse structure includes a substratehaving an overlying metal layer, a dielectric layer formed on an uppersurface of the metal layer, and a contact formed of contact materialwithin a contact via etched through the dielectric layer into the metallayer. The contact via includes a metal material at a bottom surface ofthe contact via and an untreated or partially treated metal precursor ontop of the metal material.

According to another embodiment of the present invention, an antifusestructure is provided. The antifuse structure includes a substratehaving an overlying metal layer, a dielectric layer formed on an uppersurface of the metal layer, a trench formed in the metal layer andfilled with a metal material and an untreated or partially treated metalprecursor on top of the metal material, and a plurality of contactsformed within contact vias etched to a top of the trench and contactingthe untreated or partially treated metal precursor.

According to yet another embodiment of the present invention, anantifuse structure is provided. The antifuse structure includes asubstrate having an overlying metal layer, a plurality of contactsformed to the metal layer, and a tunnel formed between the plurality ofcontacts and filled with an untreated or partially treated metalprecursor.

According to another embodiment of the present invention, a method forforming contacts of an antifuse structure is provided. The methodincludes etching a contact via into a metal layer overlying a substrate,depositing metal material at a bottom surface of the contact via and anuntreated or partially treated metal precursor on top of the metalmaterial, and depositing contact material within the contact via to forma contact.

According to another embodiment of the present invention, a method forforming contacts of an antifuse structure is provided. The methodincludes forming a trench in a metal layer overlying a substrate,depositing metal material in the trench and untreated or partiallytreated metal precursor on top of the metal material, planarizing theuntreated or partially treated metal precursor within the trench,depositing a dielectric layer on the untreated or partially treatedmetal precursor, etching contact vias to an upper surface of theuntreated or partially treated metal precursor, and depositing contactmaterial within the contact vias to form contacts.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIG. 1 is a diagram illustrating of an antifuse structure that can beimplemented within embodiments of the present invention.

FIGS. 2A and 2B are diagrams respectively illustrating contact viadiameters of the contact via shown in FIG. 1 according to an embodimentof the present invention and that of the conventional art.

FIGS. 3A and 3D are diagrams illustrating a contact formation of aplurality of contacts within the antifuse structure shown in FIG. 1 thatcan be implemented within alternative embodiments of the presentinvention.

FIGS. 4A and 4B are diagrams illustrating a contact formation of aplurality of contacts within the antifuse structure shown in FIG. 1 thatcan be implemented within alternative embodiments of the presentinvention.

FIGS. 5A and 5B are diagrams illustrating a contact formation of acontact within the antifuse structure shown in FIG. 1 that can beimplemented within alternative embodiments of the present invention.

DETAILED DESCRIPTION

According to an embodiment of the present invention, an antifusestructure is provided that can be implemented within embodiments of thepresent invention. As shown in FIG. 1, the antifuse structure 100includes a substrate 10 and a metal layer 12 overlying the substrate 10.The present invention may be implemented in other technologies, forexample, write once read only memory. The metal layer 12 may be asilicide containing material such as a metal silicide, a metalsilicide-metal germanide alloy, or a metal silicide-metal carbide alloy.The metal layer 12 has a thickness ranging from approximately 10-50nanometers (nm).

Further in FIG. 1, a capping layer 15 is deposited at an upper surface14 of the metal layer 12 and planarized by conventional deposition andplanarization procedures. The capping layer 15 may be formed of siliconnitride (SiN), for example. A dielectric layer 16 is deposited on thecapping layer 15. The dielectric layer 16 may be formed of silicondioxide (SiO₂). A metal-filled contact 18 is formed within the cappinglayer 15 and the dielectric layer 16. Details regarding the formation ofthe contact 18 will now be described with reference to FIGS. 1 through5B.

Referring now to FIG. 1, a contact via 20 is etched through a dielectriclayer 16, the capping layer 15 and into the metal layer 12 byconventional lithographic and etching processes. Referring to FIGS. 2Aand 2B, according to an embodiment of the present invention, thediameter D₁ of the contact via 20 is approximately one half of thediameter D₂ of a conventional contact via 30 as shown in FIG. 2B. Forexample, if diameter D₂ of the conventional contact via 30 isapproximately 90 nanometers (nm), then the diameter D₁ of the contactvia 20 is approximately 40-45 nanometers (nm). According to anembodiment of the present invention, the diameter D₁ of the contact via20 ranges from between approximately 10 to 200 nanometers (nm),preferably approximately 40 to 60 nanometers (nm). Therefore, thecontact via 20 is considered to be an undersized contact via incomparison to that of the conventional art. According to an embodimentof the present invention, the undersized contact via 20 may be formed bya different photo mask or by having less exposure to generate theundersized contact via 20. The undersized contact via 20 mayalternatively be used in a fuse structure. According to an embodiment ofthe present invention, a semiconductor device may comprise bothregular-sized contacts and undersized contacts.

Further in FIG. 1, a metal material 25 is deposited into the bottom ofthe contact via 20. A metal precursor 26 is then deposited into thecontact via 20 on top of the metal material 25. The metal precursor 26includes both a metal material and an organic carrier material.According to an embodiment of the present invention, the metal material25 and the metal material included in the metal precursor 26 may be forexample, titanium (Ti), tantalum (Ta), cobalt (Co), nickel (Ni),tungsten (W), chromium (Cr), molybdenum (Mo), rhenium (Re), or platinum(Pt) or other transition metal or rare earth metal. The metal precursor26 is deposited in the contact via 20 by a chemical vapor deposition(CVD) process thereby evaporating the organic carrier material andleaving the metal material of the metal precursor 26 in the metal layer12. This process is performed at a temperature of approximately 400degrees Celsius. The metal material and any residual carbon containingmaterial is then treated by an N2/H2 plasma to break a bond of the metalmaterial and the carbon containing material. If the contact 18 is formedin a regular-sized contact via 30 then the treatment breaks the bondbetween the metal material and the carbon containing material resultingin the metal material remaining in the metal layer 12. If the contact 18is formed in an undersized contact via 20 then the metal precursor 26may remain untreated or only be partially treated by the N2/H2;therefore, some of the residual carbon containing material remainsattached to a portion of the metal material at the metal layer 12,thereby leaving untreated or partially treated metal precursor 26 a atan upper surface of the metal material 25 and forming a high resistivematerial. According to an embodiment of the present invention, the metalmaterial 25 is of a predetermined thickness ranging from approximately 2to 5 nanometers (nm) and the untreated or partially treated metalprecursor 26 a is of a predetermined thickness ranging fromapproximately 10 nanometers (nm) to approximately 20 nanometers (nm).

Upon applying a large programming current through that material, thebond is broken between the metal material and the organic carriermaterial to place the antifuse structure 100 in a low resistance state.According to an embodiment of the present invention, a voltage isapplied to the antifuse structure 100 to make the antifuse structure 100conductive. The voltage ranges from approximately 2 volts (V) toapproximately 20 volts (V), for example.

Contact material 28 such as tungsten (W) is then deposited within thecontact via 20 to form the contact 18.

FIGS. 3A through 3D are diagrams illustrating a contact formation of anantifuse structure that can be implemented within alternativeembodiments of the present invention. As shown in FIG. 3A, a trench 42is formed in a metal layer 41 over a substrate 40. In FIG. 3B, thetrench 40 is filled with a metal material 43 and an untreated orpartially treated metal precursor 44 such as CVD titanium nitride (TiN)precursor. The present invention is not limited to the use of CVD TiNand any other untreated or partially treated metal precursor suitablefor the purpose set forth herein may be used. According to an embodimentof the present invention, the metal material 43 is of a predeterminedthickness ranging from approximately 2 to 5 nanometers (nm) and theuntreated metal precursor 44 is of a predetermined thickness rangingfrom approximately 10 nanometers (nm) to approximately 20 nanometers(nm).

In FIG. 3C, the untreated or partially treated metal precursor 44 isplanarized via a chemical mechanical polishing (CMP) process, forexample. In FIG. 3D, a dielectric layer 46 is deposited on an uppersurface of the untreated or partially treated metal precursor 44 and aplurality of contact vias 48 are formed to the upper surface of thetrench 42 and contacting the untreated or partially treated metalprecursor 44 and filled with a contact material 49 such as tungsten (W).

FIGS. 4A and 4B are diagrams illustrating a contact formation of aplurality of the contacts within the antifuse structure shown in FIG. 1that can be implemented within alternative embodiments of the presentinvention. In FIGS. 4A and 4B, a sub-way tunnel of untreated orpartially treated metal precursor is formed between a plurality ofcontacts 18 according to an embodiment of the present invention. Asshown in FIGS. 4A and 4B, a tunnel 50 is formed between a plurality ofcontacts 18, the tunnel 50 is filled with untreated or partially treatedmetal precursor 52 such as untreated CVD TiN. An insulating layer 54such as silicon nitride (SiN) is formed over the contacts 18. Theinsulating layer 54 may be formed of a predetermined thickness rangingfrom approximately 50 nanometers (nm) to approximately 500 nanometers(nm). When a large programming current is applied to the antifusestructure 100, the structure 100 is in a low resistive state and becomesconductive to send signals.

FIGS. 5A and 5B are diagrams illustrating a contact formation of anantifuse structure that can be implemented within alternativeembodiments of the present invention. As shown in FIG. 5A, a contact via60 is formed to an upper surface of a silicon substrate 62 having anoverlying silicide layer 64 and a dielectric layer 65 formed over thesilicide layer 64, for example. FIG. 5B is an exploded view of sectionA′ showing the details of the contact via 60 in FIG. 5A. In FIG. 5B, asputtering process is performed to clean a bottom of the contact via 60.Then, a metal material 66 is deposited within the contact via 60. Themetal material 66 may be titanium (Ti) however, the present invention isnot limited hereto and any other material suitable for the purpose setforth herein may be used. The metal material 66 may be tantalum (Ta),cobalt (Co), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo),rhenium (Re), or platinum (Pt) or other transition metal or rare earthmetal. Next, a treated metal precursor 68 such as treated CVD TiN may bedeposited on the metal material 66. The treated metal precursor 68 mayhave a predetermined thickness ranging from approximately 1 nanometer(nm) to approximately 10 nanometers (nm). Untreated or partially treatedmetal precursor 70 is then deposited. According to an embodiment of thepresent invention, the untreated or partially treated metal precursor 70may be CVD titanium nitride (TiN). The untreated metal precursor 70 mayhave a predetermined thickness ranging from approximately 1 nanometer(nm) to approximately 20 nanometers (nm). The untreated or partiallytreated metal precursor 70 may be formed of the same metal material asthe metal material 66. The metal material may be titanium (Ti). Next,treated metal precursor 68 may be deposited on the untreated orpartially treated metal precursor 70. The contact via 60 is then filledwith a contact material 72 such as tungsten (W) to form a metal-filledcontact 18.

Embodiments of the present invention provide the advantages of usinguntreated metal precursor at the bottom surface of a contact via of eachcontact, thereby causing the contact to be resistive. By applying alarge programming current, localized heat breaks the bond of metal andthe organic carrier material, therefore resulting in a low resistanceprogramming state causing the contact to be conductive.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneore more other features, integers, steps, operations, elementcomponents, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the preferred embodiment to the invention had been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

1. A method for forming contacts of an antifuse structure, the methodcomprising: etching a contact via to an upper surface of a metal layeroverlying a substrate; depositing metal material at a bottom surface ofthe contact via and an untreated or partially treated metal precursor ontop of the metal material; and depositing contact material within thecontact via to form a contact.
 2. The method of claim 1, wherein themetal material and the untreated or partially treated metal precursorcomprise a metal material from a group including titanium (Ti), tantalum(Ta), cobalt (Co), nickel (Ni), tungsten (W), chromium (Cr), molybdenum(Mo), rhenium (Re), or platinum (Pt), other transition metal and rareearth metal.
 3. The method of claim 2, wherein the contact via is of adiameter ranging from approximately 10 to 200 nanometers (nm).
 4. Themethod of claim 2, wherein the metal material at the bottom surface ofthe contact via is of a predetermined thickness ranging fromapproximately 2 to 5 nanometers (nm) and the untreated or partiallytreated metal precursor is of a predetermined thickness ranging fromapproximately 10 nanometers (nm) to 20 nanometers (nm).
 5. The method ofclaim 1, further comprising: depositing a treated metal precursor on topof the metal material; depositing the untreated or partially treatedmetal precursor on top of the treated metal precursor; and depositing atreated metal precursor on top of the untreated or partially treatedmetal material.